A Dual-gate subharmonic injection-locked oscillator using 0.5 µm GaAs pHEMT technology

Author

Huang, Fan-Hsiu ; Tsai, Meng-Hsiu ; Chang, Hong-Yeh ; Hsin, Yue-Ming

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan

fYear

2010

fDate

7-10 Dec. 2010

Firstpage

940

Lastpage

943

Abstract

A dual-gate subharmonic injection-locked oscillator (SILO) designed for Q-band millimeter-wave applications has been implemented in 0.5 μm GaAs pHEMT process. Based on the dual-gate circuit topology, a wide-bandwidth and high-frequency negative resistance can be easily obtained for determining the free-running oscillation frequency by a proper resonator. The free-running frequency is designed around 49 GHz. The power consumption is 75 mW from a 5 V supply. The measured frequency tuning range is from 48.7 GHz to 49.7 GHz with 8 dBm output power. By injecting a 2^nd-order subharmonic signal into the oscillator without any frequency tuning, the maximum locking range can reach to be 2.8 GHz. The measured output phase noise under locking status is close to -121 dBc/Hz at 1-MHz offset frequency.

Keywords

high electron mobility transistors; injection locked oscillators; network topology; GaAs; Q-band millimeter wave applications; dual-gate circuit topology; dual-gate subharmonic injection-locked oscillator; free running oscillation frequency; frequency 48.7 GHz to 49.7 GHz; high frequency negative resistance; pHEMT technology; phase noise; power 75 mW; size 0.5 mum; subharmonic signal; voltage 5 V; wide bandwidth; Frequency measurement; Injection-locked oscillators; Phase measurement; Phase noise; Power measurement; Resonant frequency; Dual-gate; enhanced/depletion-mode HEMT; injection locked oscillator; subharmonic injection locking;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2010 Asia-Pacific

Conference_Location

Yokohama

Print_ISBN

978-1-4244-7590-2

Electronic_ISBN

978-1-902339-22-2

Type

conf

Filename

5728550