Title :
A low DC power high conversion gain frequency doubler IC for 22-29GHz UWB applications
Author :
Sun, Jiangtao ; Liu, Qing ; Suh, Yong-Ju ; Shibata, Takayuki ; Yoshimasu, Toshihiko
Author_Institution :
Grad. Sch. of Inf., Production & Syst., Waseda Univ., Kitakyushu, Japan
Abstract :
A balanced frequency doubler has been demonstrated in 0.25-μm SOI SiGe BiCMOS technology operating from 22GHz to 29GHz with high fundamental frequency suppression and high conversion gain. A LC resonator circuit is designed to improve the suppression and conversion gain. The measured fundamental frequency suppression of greater than 45dBc is achieved at an input power of -9dBm in the 22-29GHz. Moreover, measured maximum conversion gain of 12.6dB is obtained at an input power of -19dBm. The frequency doubler works on 3.3V and doubler core only consumes 7.9mW DC power.
Keywords :
BiCMOS integrated circuits; frequency multipliers; resonators; silicon-on-insulator; ultra wideband technology; LC resonator circuit; SOI SiGe BiCMOS technology; UWB application; balanced frequency doubler; frequency 22 GHz to 29 GHz; high fundamental frequency suppression; low DC power high conversion gain frequency doubler IC; maximum conversion gain; suppression gain; Equations; Frequency measurement; Gain measurement; Mathematical model; Power measurement; Resonant frequency; Silicon germanium; Frequency doubler; UWB; high conversion gain; high suppression; low DC power;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2010 Asia-Pacific
Conference_Location :
Yokohama
Print_ISBN :
978-1-4244-7590-2
Electronic_ISBN :
978-1-902339-22-2
