Title :
A highly efficient reconfigurable 130nm CMOS-SOI RF power amplifier for multi-radio emitter
Author :
Andia, Luis ; Belot, Didier ; Villegas, Martine ; Baudoin, Genevieve
Author_Institution :
ST Microelectron. - Innovation & Collaborative Res., Crolles, France
Abstract :
A class E power amplifier (PA) has been designed and simulated for multi-radio applications in the 1.8 to 5GHz frequency band using a 130 nm CMOS-SOI technology. The PA is a single stage, single ended, self-biased cascode formed by a thin oxide transistor as common source device and a laterally diffused MOS (LDMOS) transistor as common gate. Switched fully integrated high current inductors are used as part of the class E wave shaping network. For the whole frequency band, the PA achieves at least 50% PAE and a gain of more than 14 dB with 6 dBm driving signal.
Keywords :
CMOS analogue integrated circuits; power amplifiers; radiofrequency integrated circuits; silicon-on-insulator; CMOS-SOI RF power amplifier; LDMOS; class E power amplifier; class E wave shaping network; common source device; frequency 1.8 GHz to 5 GHz; high current inductors; laterally diffused MOS transistor; multi-radio emitter; size 130 nm; thin oxide transistor; CMOS integrated circuits; Indium gallium arsenide; Logic gates; Radio frequency; Standards; Transistors; WiMAX; Power amplifiers; silicon on insulator technology; switched mode power amplifiers;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2010 Asia-Pacific
Conference_Location :
Yokohama
Print_ISBN :
978-1-4244-7590-2
Electronic_ISBN :
978-1-902339-22-2
