DocumentCode
540685
Title
30 and 90 MHz oscillators operating through 450 and 470 °C for high temperature wireless sensors
Author
Ponchak, George E. ; Scardelletti, Maximilian C. ; Jordan, Jennifer L.
Author_Institution
NASA Glenn Res. Center, Cleveland, OH, USA
fYear
2010
fDate
7-10 Dec. 2010
Firstpage
1027
Lastpage
1030
Abstract
This paper presents the first demonstration of oscillators operating above 400°C. The oscillators are fabricated with Cree SiC MESFETs and thin film, MIM capacitors and inductors on an alumina substrate. The tank circuit inductor is used to magnetically couple the oscillator signal to a coil placed 1 m from the circuit. The first oscillator is designed at 30 MHz, it operated at 27.8 MHz, and the second is designed to operate at 100 MHz, it operated at 90 MHz. The 30 MHz oscillator operated through 450°C and the 100 MHz oscillator operated through 470°C. The received power, frequency, and phase noise as a function of temperature is presented. In addition, the failure mechanism of the oscillator is discussed.
Keywords
MIM devices; Schottky gate field effect transistors; VHF oscillators; alumina; circuit reliability; detector circuits; distributed sensors; failure analysis; silicon compounds; thin films; wide band gap semiconductors; Al2O3; MESFET; alumina substrate; failure mechanism; frequency 30 MHz; frequency 90 MHz; high temperature wireless sensors; oscillators; tank circuit inductor; temperature 450 C; temperature 470 C; thin film MIM capacitor; Gold; Oscillators; Packaging; RNA; Radio frequency; Strips; Temperature distribution; High Temperature; Oscillator; SiC; Wireless Sensor;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference Proceedings (APMC), 2010 Asia-Pacific
Conference_Location
Yokohama
Print_ISBN
978-1-4244-7590-2
Electronic_ISBN
978-1-902339-22-2
Type
conf
Filename
5728568
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