Experimental investigation on wideband intermodulation distortion compensation characteristics of 3.5-GHz band 140-W class feed-forward power amplifier employing GaN HEMTs

Author

Suzuki, Yasunori ; Ohkawara, Junya ; Narahashi, Shoichi

Author_Institution

Res. Labs., NTT DOCOMO, INC., Yokosuka, Japan

fYear

2010

fDate

7-10 Dec. 2010

Firstpage

1

Lastpage

4

Abstract

This paper presents an experimental investigation on the wideband intermodulation distortion compensation characteristics of a 3.5-GHz feed-forward power amplifier for mobile base stations. The fabricated 3.5-GHz band 140-W class feed-forward power amplifier employing gallium nitride high electron mobility transistors (GaN HEMTs) achieves the intermodulation distortion compensation bandwidth of 160 MHz at the output power of 12.5 W and the adjacent channel leakage power ratio of -45 dBc using a long term evolution test signal with the bandwidth of 5 MHz. The results confirm that the feed-forward power amplifier with GaN HEMTs is a worthwhile linearizer because it offers wideband intermodulation distortion compensation performance to 3.5-GHz band mobile base stations.

Keywords

III-V semiconductors; feedforward amplifiers; gallium; high electron mobility transistors; microwave power amplifiers; wide band gap semiconductors; GaN; HEMT; adjacent channel leakage power ratio; feed-forward power amplifier; frequency 160 MHz; frequency 3.5 GHz; frequency 5 MHz; high electron mobility transistors; mobile base stations; power 12.5 W; power 140 W; wideband intermodulation distortion compensation; HEMTs; MODFETs; Power amplifiers; Power generation; Regulators; Wideband; GaN HEMT; base stations; feed-forward power amplifiers; wideband nonlinear distortion compensation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2010 Asia-Pacific

Conference_Location

Yokohama

Print_ISBN

978-1-4244-7590-2

Electronic_ISBN

978-1-902339-22-2

Type

conf

Filename

5728575