Internally-matched GaN HEMT high efficiency power amplifier for Space Solar Power Stations

Author

Yamanaka, K. ; Tuyama, Y. ; Ohtsuka, H. ; Chaki, S. ; Nakayama, M. ; Hirano, Y.

Author_Institution

Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Kamakura, Japan

fYear

2010

fDate

7-10 Dec. 2010

Firstpage

119

Lastpage

122

Abstract

In this paper, an internally-matched GaN HEMT high efficiency amplifier for Space Solar Power Stations/System (SSPS) is presented. The internal matching circuit was designed so that 2^nd and 3^rd harmonics are tuned to obtain maximum power added efficiency (PAE). PAE of 70% was successfully obtained with 7W output power at 5.8GHz. All matching circuit is in a hermetically sealed package and no external matching component is necessary. It will enable to shrink volume and mass of modules loaded onto SSPS satellites.

Keywords

HEMT integrated circuits; III-V semiconductors; gallium compounds; integrated circuit design; power amplifiers; solar power stations; wide band gap semiconductors; HEMT high efficiency power amplifier; SSPS satellites; all matching circuit; frequency 5.8 GHz; internal matching circuit; power 7 W; power added efficiency; space solar power stations; Gallium nitride; HEMTs; Harmonic analysis; Microwave amplifiers; Power amplifiers; Power generation; High-voltage techniques; MODFET power amplifiers; Pulse measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2010 Asia-Pacific

Conference_Location

Yokohama

Print_ISBN

978-1-4244-7590-2

Electronic_ISBN

978-1-902339-22-2

Type

conf

Filename

5728605