DocumentCode
540725
Title
Cost effective, high performance GaN technology
Author
Boles, Timothy ; Carlson, Douglas ; Varmazis, Costas ; Barrett, Jason
Author_Institution
M/A-COM Technol. Solutions, Lowell, MA, USA
fYear
2010
fDate
7-10 Dec. 2010
Firstpage
131
Lastpage
134
Abstract
Gallium Nitride HEMT transistors are the future solid state technology that is presently advancing the performance of state-of-the-art RF power amplifiers from HF frequencies through low mmW applications. Further developments in the basic HEMT material structure, including the choice of substrate, will continue to push the RF performance, output power, frequency response, and bandwidth; availability; and affordability in the microwave marketplace for this newest semiconductor.
Keywords
HF amplifiers; III-V semiconductors; frequency response; gallium compounds; millimetre wave amplifiers; power HEMT; power amplifiers; radiofrequency amplifiers; wide band gap semiconductors; GaN; HEMT transistor; HF frequency; RF power amplifier; frequency response; mmW application; solid state technology; Aluminum gallium nitride; Gallium arsenide; Gallium nitride; HEMTs; Performance evaluation; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference Proceedings (APMC), 2010 Asia-Pacific
Conference_Location
Yokohama
Print_ISBN
978-1-4244-7590-2
Electronic_ISBN
978-1-902339-22-2
Type
conf
Filename
5728608
Link To Document