DocumentCode :
540763
Title :
Analysis and implementation of inverse class-F power amplifier for 3.5GHz transmitters
Author :
Xu, Yingjie ; Wang, Jingqi ; Zhu, Xiaowei
Author_Institution :
State Key Lab. of Millimeter Waves, Southeast Univ., Nanjing, China
fYear :
2010
fDate :
7-10 Dec. 2010
Firstpage :
410
Lastpage :
413
Abstract :
In this paper, a theoretical analysis of inverse class-F power amplifier is carried out based on maximally flat drain current and voltage waveforms with the third-harmonic current and second-harmonic voltage peaking. The transistor is modeled as a switch in analysis, in which including non-zero switch-on resistance in parallel with an output capacitance. Therefore, the equations of drain efficiency and output power are derived. An inverse class-F power amplifier for 3.5GHz transmitter application based on CGH40010 GaN HEMT is designed and measured in this paper. Experimental results show that over 70% maximum drain efficiency and around 40dBm output power can be achieved. And a good broadband performance of the fabricated amplifier is also presented.
Keywords :
III-V semiconductors; capacitance; electric resistance; gallium compounds; high electron mobility transistors; microwave power amplifiers; power transistors; GaN; HEMT; drain current waveform; drain efficiency; frequency 3.5 GHz; inverse class-F power amplifier; nonzero switch-on resistance; output capacitance; output power; second-harmonic voltage peaking; third-harmonic current; transistor; transmitter; voltage waveform; Gallium nitride; HEMTs; Harmonic analysis; Microwave amplifiers; Power amplifiers; Power generation; GaN HEMT; inverse class-F; power amplifiers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference Proceedings (APMC), 2010 Asia-Pacific
Conference_Location :
Yokohama
Print_ISBN :
978-1-4244-7590-2
Electronic_ISBN :
978-1-902339-22-2
Type :
conf
Filename :
5728646
Link To Document :
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