A 24-GHz highly integrated transceiver in 0.5-µm E/D-PHEMT process for FMCW automotive radar applications

Author

Lin, Chi-Hsien ; Wu, Yi-Shuo ; Yeh, Yen-Liang ; Weng, Shou-Hsien ; Chen, Guan-Yu ; Shen, Che-Hao ; Chang, Hong-Yeh

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan

fYear

2010

fDate

7-10 Dec. 2010

Firstpage

512

Lastpage

515

Abstract

This paper describes a 24-GHz highly integrated transceiver in 0.5-μm E/D-PHEMT process for frequency-modulation continuous-wave (FMCW) automotive radar applications. The transceiver includes a voltage controlled oscillator (VCO), a power amplifier (PA), a buffer amplifier (BA), a low noise amplifier (LNA), and a down converter mixer. The transmitter delivers a RF output power of 13 dBm with a dc supply voltage of 5 V. The conversion gain and noise figure of the receiver are better than 9 and 8.7 dB, respectively. The chip size of the transceiver is 3×2 mm².

Keywords

CW radar; FM radar; HEMT integrated circuits; convertors; low noise amplifiers; microwave mixers; power amplifiers; radio transceivers; road vehicle radar; E-D-PHEMT process; FMCW automotive radar application; buffer amplifier; down converter mixer; frequency 24 GHz; frequency modulation continuous wave automotive radar application; integrated transceiver; low noise amplifier; noise figure; power amplifier; size 0.5 mum; voltage 5 V; voltage controlled oscillator; Automotive engineering; Frequency measurement; Gain; Radar; Radio frequency; Transceivers; Voltage-controlled oscillators; Enhancement/depletion-pseudomorphic high-electron mobility transistor (E/D-PHEMT); frequency modulation continuous wave (FMCW); microwave; radar;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2010 Asia-Pacific

Conference_Location

Yokohama

Print_ISBN

978-1-4244-7590-2

Electronic_ISBN

978-1-902339-22-2

Type

conf

Filename

5728672