Title :
A compact flip chip high power amplifier module for mobile applications
Author :
Yuen, Cindy ; Chu, Duc ; Laursen, Kirk ; Do, Heinz ; Pao, Yi-ching
Author_Institution :
Epic Commun., Inc., Sunnyvale, CA, USA
Abstract :
A flip chip high power amplifier is developed using Bi-FET (HBT+E/D-PHEMT) technology for emerging mobile applications. Cu-pillar bumps with high conductivity were developed for the flip chip process. This flip chip die consists of a wideband 2.3-2.7 GHz high-power, high-linearity, high-efficiency PA with an on-chip regulator, PAON logic, temperature compensation, dynamic linearization bias, and a detector circuit. It shows good performance over voltage and over temperature in a 3.3×3.3×0.8 mm laminate module using BT material. This PAM includes PA input and output matching, DC blocking caps, bias chokes, and bypass caps. No external parts are needed.
Keywords :
UHF field effect transistors; UHF power amplifiers; copper; flip-chip devices; heterojunction bipolar transistors; high electron mobility transistors; BT material; Bi-FET; Cu; Cu-pillar bumps; DC blocking caps; E/D-PHEMT; HBT; PAM; PAON logic; bias chokes; bypass caps; compact flip chip high power amplifier module; detector circuit; dynamic linearization bias; frequency 2.3 GHz to 2.7 GHz; laminate module; on-chip regulator; temperature compensation; wideband high-power PA; Assembly; Copper; Wireless communication; BT Material; Copper Pillar; Detector Circuit; Dynamic Linearization Bias Circuit; Flip Chip; High Power Amplifier; Laminate Module; Matching Elements; PAON Logic; Regulator; Thermal Analysis;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2010 Asia-Pacific
Conference_Location :
Yokohama
Print_ISBN :
978-1-4244-7590-2
Electronic_ISBN :
978-1-902339-22-2
