A compact flip chip high power amplifier module for mobile applications

Author

Yuen, Cindy ; Chu, Duc ; Laursen, Kirk ; Do, Heinz ; Pao, Yi-ching

Author_Institution

Epic Commun., Inc., Sunnyvale, CA, USA

fYear

2010

fDate

7-10 Dec. 2010

Firstpage

527

Lastpage

530

Abstract

A flip chip high power amplifier is developed using Bi-FET (HBT+E/D-PHEMT) technology for emerging mobile applications. Cu-pillar bumps with high conductivity were developed for the flip chip process. This flip chip die consists of a wideband 2.3-2.7 GHz high-power, high-linearity, high-efficiency PA with an on-chip regulator, PAON logic, temperature compensation, dynamic linearization bias, and a detector circuit. It shows good performance over voltage and over temperature in a 3.3×3.3×0.8 mm laminate module using BT material. This PAM includes PA input and output matching, DC blocking caps, bias chokes, and bypass caps. No external parts are needed.

Keywords

UHF field effect transistors; UHF power amplifiers; copper; flip-chip devices; heterojunction bipolar transistors; high electron mobility transistors; BT material; Bi-FET; Cu; Cu-pillar bumps; DC blocking caps; E/D-PHEMT; HBT; PAM; PAON logic; bias chokes; bypass caps; compact flip chip high power amplifier module; detector circuit; dynamic linearization bias; frequency 2.3 GHz to 2.7 GHz; laminate module; on-chip regulator; temperature compensation; wideband high-power PA; Assembly; Copper; Wireless communication; BT Material; Copper Pillar; Detector Circuit; Dynamic Linearization Bias Circuit; Flip Chip; High Power Amplifier; Laminate Module; Matching Elements; PAON Logic; Regulator; Thermal Analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2010 Asia-Pacific

Conference_Location

Yokohama

Print_ISBN

978-1-4244-7590-2

Electronic_ISBN

978-1-902339-22-2

Type

conf

Filename

5728676