Title :
CMOS dual-band low-noise amplifier for world-wide WiMedia Ultra-Wideband wireless personal area network system
Author :
Huang, Zhe-Yang ; Hung, Chung-Chih
Abstract :
This paper presents a dual-band low-noise amplifier (DB-LNA) with switching band groups for WiMedia Ultra-Wideband. The LNA is designed and implemented in TSMC 0.18 μm RF CMOS technology. Measurement results show that the DB-LNA gives 6.1 dB and 9.8 dB power gain, and that input and output matching are lower than -9.3dB/-9.4dB (Group-1/Group-6) and -9.2dB/-11.7dB (Group-1/Group-6). A minimum noise figure is 5.0dB/5.1dB (Group-1/Group-6) while consuming 24.8 mW (including buffer) through 1.8 V supply voltage.
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; field effect MMIC; low noise amplifiers; personal area networks; ultra wideband communication; CMOS dualband low-noise amplifier; DB-LNA; TSMC RF CMOS technology; gain 6.1 dB; gain 9.8 dB; minimum noise figure; noise figure 5.0 dB; noise figure 5.1 dB; power 24.8 mW; size 0.18 mum; switching band groups; voltage 1.8 V; world-wide WiMedia ultrawideband wireless personal area network system; CMOS integrated circuits; CMOS technology; Capacitors; Low-noise amplifiers; Switches; Switching circuits; Ultra wideband technology; LNA; Low-Noise Amplifier; UWB; Ultra-wideband; WiMedia;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2010 Asia-Pacific
Conference_Location :
Yokohama
Print_ISBN :
978-1-4244-7590-2
Electronic_ISBN :
978-1-902339-22-2
