3-7 GHz low power wide-band common gate low noise amplifier in 0.18µm CMOS process

An ultra-wide band low noise amplifier (LNA) is proposed. An UWB LNA from 3-7 GHz has been designed exploiting the wide band input matching of common gate and the high gain of cascode amplifier. The LNA has been fabricated in the standard 0.18μm CMOS process. The measured gain is 11.5dB from 3 GHz to 7 GHz, and noise figure is 3.5 dB. The measured input and output return loss is less than -11 dB of the entire band. The measured input third-order intercept point IIP3 is 2.5 dBm at 4 GHz. It consumes 9 mW from 1.8 V supply voltage.