DocumentCode :
540831
Title :
Using inverter structure for 2∼6GHz low power high gain low noise amplifier
Author :
Hsu, Meng-Ting ; Liu, Ta-Cheng
Author_Institution :
Dept. & Inst. of Electron. Eng., Nat. Yunlin Univ. of Sci. & Technol., Douliu, Taiwan
fYear :
2010
fDate :
7-10 Dec. 2010
Firstpage :
346
Lastpage :
349
Abstract :
This paper presents a resistive-feedback amplifier and resistive-feedback inverter. To achieve low power consumption and high gain, the proposed LNA utilizes a current-reused technique and a splitting-load inductive peaking technique of resistive-feedback inverter for input matching. This UWB LNA is implemented by TSMC 0.18μm CMOS technology. The minimum noise figure is 3.67 dB. The amplifier provides maximum gain (S21) of 18.5 dB while drawing 10.3 mW from 1.5-V supply. This chip area is 1.028 × 0.921 mm2.
Keywords :
CMOS analogue integrated circuits; invertors; low noise amplifiers; low-power electronics; microwave amplifiers; ultra wideband technology; CMOS technology; TSMC; UWB LNA; current-reused technique; frequency 2 GHz to 6 GHz; gain 18.5 dB; gain 3.67 dB; low power high gain low noise amplifier; noise figure; power 10.3 mW; resistive-feedback amplifier; resistive-feedback inverter; size 0.18 mum; splitting-load inductive peaking technique; voltage 1.5 V; CMOS integrated circuits; CMOS technology; Gain; Inverters; Loss measurement; Wideband; low noise amplifier (LNA); low power; resistive-feedback inverter;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference Proceedings (APMC), 2010 Asia-Pacific
Conference_Location :
Yokohama
Print_ISBN :
978-1-4244-7590-2
Electronic_ISBN :
978-1-902339-22-2
Type :
conf
Filename :
5728715
Link To Document :
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