• DocumentCode
    540900
  • Title

    Field Effect Transistors for Terahertz detection and emission

  • Author

    Knap, Wojciech ; Klimenko, O. ; Schuster, F. ; Dyakonova, N. ; Coquillat, Dominique ; Teppe, F. ; Giffard, B.

  • Author_Institution
    Univ. Montpellier 2, Montpellier, France
  • fYear
    2010
  • fDate
    20-23 Sept. 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We review a few recent results concerning the physics and applications of Field Effect Transistors ( FETs) as Terahertz detectors and emitters. Particularly we stress results concerning dependance of THz detection and emission on high/quantizing magnetic fields and the geometry of the transistor channel.
  • Keywords
    field effect transistors; terahertz wave detectors; FET; THz detection; field effect transistor; high-quantizing magnetic field; terahertz detection; terahertz emission; transistor channel geometry; Gallium nitride; Magnetic resonance; Magnetic resonance imaging; Magnetomechanical effects;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ICECom, 2010 Conference Proceedings
  • Conference_Location
    Dubrovnik
  • Print_ISBN
    978-1-61284-998-0
  • Electronic_ISBN
    978-9-5360-3758-2
  • Type

    conf

  • Filename
    5729761
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=540900