Title :
SiC BJT driver applied to a 2 kW inverter: Performances and limitations
Author :
Tournier, Dominique ; Bevilacqua, Pascal ; Brosselard, Pierre ; Planson, Dominique ; Allard, Bruno
Author_Institution :
Lab. Ampere, Univ. de Lyon, Lyon, France
Abstract :
The control of a SiC bipolar transistor may look like the control of its Si counterpart, but not quite in fact. This paper presents a discrete base driver for a SiC bipolar transistor and validates its performances in ambient temperature while the SiC BJT is operated at high temperature. Performances and limitations of a 2 kW SiC-BJT based inverter are investigated.
Keywords :
bipolar transistors; invertors; silicon compounds; wide band gap semiconductors; BJT driver; SiC; ambient temperature; bipolar transistor; inverter; power 2 kW; Driver circuits; Inverters; JFETs; Silicon carbide; Switches; Temperature; Temperature sensors;
Conference_Titel :
Integrated Power Electronics Systems (CIPS), 2010 6th International Conference on
Conference_Location :
Nuremberg
Print_ISBN :
978-1-61284-814-3
