DocumentCode :
540936
Title :
Power module with additional low inductive current path
Author :
Frisch, Michael ; Erno, Temesi
Author_Institution :
Vincotech GmbH, Unterhaching, Germany
fYear :
2010
fDate :
16-18 March 2010
Firstpage :
1
Lastpage :
6
Abstract :
Parasitic inductances are a major problem with power modules, in particular in fast switching applications. The parasitic inductance of the component interconnections causes an overvoltage condition and increases the switchoff losses in the semiconductor. Many initiatives have been investigated to reduce the parasitic inductance in power modules utilizing a complex mechanical construction of overlapping internal bus bars forming the DC path. An alternative to this approach, which is outlined within this writing, is a concept using today´s standard power module construction but providing an additional ultra low inductive path for the transient current.
Keywords :
busbars; inductance; insulated gate bipolar transistors; interconnections; modules; overvoltage; power semiconductor switches; busbar; component interconnection; low inductive current path; overvoltage; parasitic inductance; power module; switch-off loss; transient current; Capacitors; Inductance; Insulated gate bipolar transistors; Logic gates; Multichip modules; Switches; Transient analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Power Electronics Systems (CIPS), 2010 6th International Conference on
Conference_Location :
Nuremberg
Print_ISBN :
978-1-61284-814-3
Type :
conf
Filename :
5730649
Link To Document :
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