Title :
Higher Intensity SiAvLEDs in an RF Bipolar Process Through Carrier Energy and Carrier Momentum Engineering
Author :
Snyman, Lukas W. ; Kaikai Xu ; Polleux, Jean-Luc ; Ogudo, Kingsley A. ; Viana, Carlos
Author_Institution :
Dept. of Electr. Eng., Univ. of South Africa (UNISA), Pretoria, South Africa
Abstract :
Carrier energy and momentum engineering design concepts have been utilized to realize higher intensity, up to 200 nW.μm -2 in p+nn+ silicon avalanche-based LEDs in a silicon 0.35-μm RF bipolar process. The spectral range is from 600- to 850-nm wavelength region. Best performance are up to 600-nW vertical emission in a 3-μm square active area at 10 V and 1 mA (200 nW.um-2). The achieved emitted optical intensity is about 100 fold better as compared with other published work for nearest related devices. In particular, evidence has been obtained that light emission in silicon are strongly related to scattering mechanisms in a high density n+ dopant matrix of phosphorous atoms in silicon that has been exposed to successive thermal cycles, as well on the optimization of the carrier energy and momentum distributions during such interactions.
Keywords :
CMOS integrated circuits; avalanche photodiodes; integrated optics; light emitting diodes; light scattering; optical design techniques; phosphorus; silicon; carrier energy; carrier momentum engineering; current 1 mA; high density n+ dopant matrix; higher intensity SiAvLED; light emission; momentum distributions; momentum engineering design concepts; optical intensity; p+nn+ silicon avalanche-based LED; phosphorous atom in silicon; power 600 nW; scattering mechanism; silicon RF bipolar process; size 3 mum; thermal cycles; voltage 10 V; wavelength 600 nm to 850 nm; Charge carrier processes; Crystals; Ionization; Junctions; Lattices; Scattering; Silicon; CMOS integrated circuit technology; Si LEDs; Silicon photonics; light emitting devices; optical communication; optical interconnects; sensors;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2015.2427036
