DocumentCode
540966
Title
Evaluation of commercial SOI driver performances while operated in extreme conditions (150°C-200°C)
Author
Falahi, K.E. ; Allard, B. ; Tournier, D. ; Bergogne, D.
Author_Institution
Ampere-Lab., Villeurbanne, France
fYear
2010
fDate
16-18 March 2010
Firstpage
1
Lastpage
3
Abstract
This paper presents the experimental characterization of commercial SOI MOSFET drivers from room temperature to 200°C and beyond. Parameters such as current amplitude, delay time, rise time and fall time of the output waveforms of the drivers are monitored. The test results will be discussed, and will help produce the specifications of an integrated SOI-based driver with the necessary functionality to drive an inverter up to 220°C ambient temperature.
Keywords
MOSFET; driver circuits; silicon-on-insulator; commercial SOI MOSFET driver performances; current amplitude; delay time; fall time; rise time; temperature 150 degC to 200 degC; temperature 293 K to 298 K; Driver circuits; Inverters; JFETs; Logic gates; Silicon carbide; Temperature measurement; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Power Electronics Systems (CIPS), 2010 6th International Conference on
Conference_Location
Nuremberg
Print_ISBN
978-1-61284-814-3
Type
conf
Filename
5730680
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