A 10 Gb/s electro-absorption-modulator (EAM) driver using push-pull emitter followers and a cascoded output switch

Author

Maxim, A.

Volume

1

fYear

0

fDate

0-0 0

Firstpage

229

Abstract

A 10 Gb/s EAM driver was realized in a 0.2μ SiGe technology having a 60 GHz transition frequency. Fast switching was achieved with a cascoded output switch, while low voltage operation was assured using a tail resistor that generates the modulation current in conjunction with a common-mode feedback. Inductive peaking and PTAT biasing was used throughout the signal path, enhancing switching speed and minimizing temperature and process variation of the AC performances. The power dissipation was reduced with 30% by using push-pull emitter follower architecture. ICs main specifications are: supply voltage4.75-5.5V, modulation current 40-120mA, rise/fall time <25ps, deterministic jitter <15ps and die area 1.3×1.7mm².

Keywords

driver circuits; electro-optical modulation; electroabsorption; modulators; silicon compounds; 0.2 micron; 10 Gbyte/s; 4.75 to 5.5 V; 40 to 120 mA; 60 GHz; AC performances; EAM driver; PTAT biasing; SiGe; cascaded output switch; common-mode feedback; electro-absorption-modulator; fast switching; inductive peaking; low voltage operation; modulation current; power dissipation; push-pull emitter followers; signal path; switching speed; tail resistor;

fLanguage

English

Publisher

ieee

Conference_Titel

Signals, Circuits and Systems, 2003. SCS 2003. International Symposium on

Print_ISBN

0-7803-7979-9

Type

conf

DOI

10.1109/SCS.2003.1226990

Filename

5731262