Normally-off Logic Based on Resistive Switches—Part II: Logic Circuits

Author

Balatti, Simone ; Ambrogio, Stefano ; Ielmini, Daniele

Author_Institution

Dipt. di Elettron. & Inf., Politec. di Milano, Milan, Italy

Volume

62

Issue

6

fYear

2015

fDate

Jun-15

Firstpage

1839

Lastpage

1847

Abstract

Logic gates based on the resistive switching random access memory (RRAM) allow normally-off digital computing because of the nonvolatile nature of the RRAM switch [1]. An extremely small area consumption can be achieved because of the 2-terminal structure of the RRAM switch and its capability of 3-D stacking. However, the details of RRAM organization within the array must be thoroughly investigated. This paper discusses the array organization and the select/unselect schemes of the RRAM logic circuits. We demonstrate a 1-bit adder to support the high functionality of RRAM logic. These results support RRAM as a promising technology for nonvolatile logic circuits beyond CMOS.

Keywords

CMOS logic circuits; CMOS memory circuits; adders; logic design; logic gates; resistive RAM; switching circuits; three-dimensional integrated circuits; 3D stacking; CMOS; RRAM logic circuits; RRAM organization; RRAM switch; adder; array organization; logic gates; nonvolatile logic circuits; normally-off digital computing; normally-off logic; resistive switches; resistive switching random access memory; select-unselect schemes; Arrays; Logic circuits; Logic gates; Optical switches; Transistors; Logic circuits; logic computing; logic gates; resistive switching random access memory (RRAM); resistive switching random access memory (RRAM).;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2423001

Filename

7102701