Static and large signal noise analysis in GaAs and GaN Schottky diodes for high frequency applications

Author

Pardo, Diego ; Grajal, Jesús ; Pérez, Susana ; Mateos, Javier ; González, Tomás

Author_Institution

Univ. Politec. de Madrid, Madrid, Spain

fYear

2011

fDate

8-11 Feb. 2011

Firstpage

1

Lastpage

4

Abstract

This paper presents an analysis of the noise spectra of GaAs and GaN Schottky barrier diodes (SBD) operating under static and time varying conditions. The noise spectra obtained from Monte Carlo simulations (MC) of the SBDs show two resonances in the terahertz frequency region that are analyzed as a function of the SBD structure and working conditions. MC simulations are compared with published analytical models to describe the noise spectra of the SBDs.

Keywords

III-V semiconductors; Monte Carlo methods; Schottky barriers; Schottky diodes; gallium arsenide; gallium compounds; terahertz waves; wide band gap semiconductors; GaAs; GaN; Monte Carlo simulations; Schottky barrier diodes; high frequency applications; noise spectra; signal noise analysis; static conditions; terahertz frequency region; time varying conditions; Analytical models; Gallium arsenide; Gallium nitride; Noise; Resonant frequency; Schottky diodes; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices (CDE), 2011 Spanish Conference on

Conference_Location

Palma de Mallorca

Print_ISBN

978-1-4244-7863-7

Type

conf

DOI

10.1109/SCED.2011.5744247

Filename

5744247