DocumentCode :
54244
Title :
Adaptive Paired Page Prebackup Scheme for MLC NAND Flash Memory
Author :
Jaeil Lee ; Dongkun Shin
Author_Institution :
Samsung Electron., Hwasung, South Korea
Volume :
33
Issue :
7
fYear :
2014
fDate :
Jul-14
Firstpage :
1110
Lastpage :
1114
Abstract :
Multilevel cell (MLC) NAND flash memory is more cost effective compared with single-level cell NAND flash memory as it can store two or more bits in a memory cell. However, in MLC flash memory, a programming operation can corrupt the paired page under abnormal termination. In order to solve the paired page problem, a backup scheme is generally used, which inevitably causes performance degradation and shortens the lifespan of flash memory. In this paper, we propose a more efficient paired page prebackup scheme for MLC flash memory. It adaptively exploits interleaving, copyback operations, and parity data to reduce the prebackup overhead. In experiments, the proposed scheme reduced the backup overhead by up to 78%.
Keywords :
NAND circuits; flash memories; MLC NAND flash memory; adaptive paired page prebackup scheme; memory cell; multilevel cell NAND flash memory; parity data; performance degradation; prebackup overhead reduction; single-level cell NAND flash memory; Ash; Flash memories; Memory management; Programming; Smart phones; Writing; Adaptive LSB prebackup; flash translation layer; multilevel cell (MLC); nand flash memory; storage;
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/TCAD.2014.2309857
Filename :
6835148
Link To Document :
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