Title :
Parameters extraction of deep submicron, nanometric compact device models
Author :
Nelayev, Vladislav ; Stempitsky, Viktor ; Tuan Trung Tran ; Borzdov, Andrey ; Borzdov, Vladimir ; Speransky, Dmitry ; Zhevnjak, Oleg
Author_Institution :
Micro- & Nanoelectron. Dept., Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
Abstract :
In this work a new contribution to the simulation of deep submicron, nanometer-scale MOFFET transistor characteristics is considered. Proposed approach is based on the use of traditional “compact” submicron MOS device models. Parameters of these models are verified by means of fitting procedure to results obtained by use exact physical models taking into account quantum effects accompanying charge carriers transfer in deep submicron devices.
Keywords :
MOSFET; nanoelectronics; semiconductor device models; charge carriers transfer; compact submicron MOS device models; deep submicron nanometric compact device models; nanometer-scale MOFFET transistor characteristics; parameter extraction; quantum effects; Computational modeling; Electronic mail; Integrated circuit modeling; MOSFETs; Mathematical model; Nanoelectronics; Simulation; Compact model; I–V characteristics; MOS transistor; Silvaco package; deep submicron; device parameters; extraction;
Conference_Titel :
CAD Systems in Microelectronics (CADSM), 2011 11th International Conference The Experience of Designing and Application of
Conference_Location :
Polyana-Svalyava
Print_ISBN :
978-1-4577-0042-2
Electronic_ISBN :
978-966-2191-17-2
