Parameters extraction of deep submicron, nanometric compact device models

Author

Nelayev, Vladislav ; Stempitsky, Viktor ; Tuan Trung Tran ; Borzdov, Andrey ; Borzdov, Vladimir ; Speransky, Dmitry ; Zhevnjak, Oleg

Author_Institution

Micro- & Nanoelectron. Dept., Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus

fYear

2011

fDate

23-25 Feb. 2011

Firstpage

408

Lastpage

409

Abstract

In this work a new contribution to the simulation of deep submicron, nanometer-scale MOFFET transistor characteristics is considered. Proposed approach is based on the use of traditional “compact” submicron MOS device models. Parameters of these models are verified by means of fitting procedure to results obtained by use exact physical models taking into account quantum effects accompanying charge carriers transfer in deep submicron devices.

Keywords

MOSFET; nanoelectronics; semiconductor device models; charge carriers transfer; compact submicron MOS device models; deep submicron nanometric compact device models; nanometer-scale MOFFET transistor characteristics; parameter extraction; quantum effects; Computational modeling; Electronic mail; Integrated circuit modeling; MOSFETs; Mathematical model; Nanoelectronics; Simulation; Compact model; I–V characteristics; MOS transistor; Silvaco package; deep submicron; device parameters; extraction;

fLanguage

English

Publisher

ieee

Conference_Titel

CAD Systems in Microelectronics (CADSM), 2011 11th International Conference The Experience of Designing and Application of

Conference_Location

Polyana-Svalyava

Print_ISBN

978-1-4577-0042-2

Electronic_ISBN

978-966-2191-17-2

Type

conf

Filename

5744515