Technology design of IGBT

Author

Artamonov, Artem ; Nelayev, Vladislav ; Shelibak, Ibrahim

Author_Institution

Micro- & Nanoelectron. Dept., Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus

fYear

2011

fDate

23-25 Feb. 2011

Firstpage

8

Lastpage

9

Abstract

Power semiconductor devices are important microelectronics components determined with the efficiency, size, and cost of electronic systems for energy application. Exact design of the modern element base of microelectronics provides reliable operation of the system. Results of the technology design of the IGBT structure are presented and discussed. Obtained data are needed for following calculations of the IGBT transistor electrical features. Presented results were obtained by means of Silvaco program package intended for technology/devise simulation.

Keywords

insulated gate bipolar transistors; power semiconductor devices; semiconductor device models; IGBT structure; IGBT transistor electrical features; Silvaco program package; devise simulation; electronic systems; energy application; microelectronics components; modern element base; power semiconductor devices; technology design; technology simulation; Annealing; Boron; Electronic mail; Insulated gate bipolar transistors; Manufacturing; P-n junctions; Transistors; IGBT transistor; design; technology simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

CAD Systems in Microelectronics (CADSM), 2011 11th International Conference The Experience of Designing and Application of

Conference_Location

Polyana-Svalyava

Print_ISBN

978-1-4577-0042-2

Electronic_ISBN

978-966-2191-17-2

Type

conf

Filename

5744550