Title :
An 8 W GaAs Class-AB amplifier for operation in envelope tracking systems
Author :
Bräckle, A. ; Ott, M. ; Heck, S. ; Berroth, M.
Author_Institution :
Inst. of Electr. & Opt. Commun. Eng., Univ. of Stuttgart, Stuttgart, Germany
Abstract :
In this paper an 8 W GaAs HEMT power amplifier for operation in envelope tracking systems is presented. The application targeted is UMTS downlink operation with a peak-to-average ratio of about 7 dB. By varying the drain bias voltage between 5 V and 12 V the compression point can be shifted in the required area. Power-added efficiency is more than 45 % in this area and above 52% in the area of average output power of a UMTS signal. Gain can be kept above 14 dB in this operation mode with a variation of 3 dB.
Keywords :
3G mobile communication; III-V semiconductors; gallium arsenide; power amplifiers; GaAs class-AB amplifier; HEMT power amplifier; UMTS downlink operation; UMTS signal; drain bias voltage; envelope tracking systems; peak-to-average ratio; power-added efficiency; 3G mobile communication; Base stations; Gain; Linearity; Power generation; Radio frequency; Voltage measurement; Class-AB amplifier; envelope tracking; power amplifiers;
Conference_Titel :
Microwave Conference (GeMIC), 2011 German
Conference_Location :
Darmstadt
Print_ISBN :
978-1-4244-9225-1
Electronic_ISBN :
978-3-9812668-3-2
