Title :
Bist ability in molecular chemistry: A step towards built in memory-devices
Author :
Kahn, O. ; Jay, C. ; Bolvin, H. ; Krober, J.
Author_Institution :
Lab. de Chim. Inorg., Univ. de Paris Sud, Orsay, France
fDate :
Oct. 29 1992-Nov. 1 1992
Abstract :
Spin Transition compounds exhibit an outstanding bistability (magnetic and optical), the makes them usable in memory devices. The origin of the hysteresis is under investigation; the macroscopic cooperative effect has already been well documented, but the phenomenon could also occur at the molecular scale, so that a model is proposed to take that point into account.
Keywords :
magnetic hysteresis; magnetic storage; molecular electronics; optical bistability; bistability; built in memory devices; hysteresis; macroscopic cooperative effect; magnetic stability; molecular chemistry; optical stability; spin transition compounds; Hysteresis; Magnetic hysteresis;
Conference_Titel :
Engineering in Medicine and Biology Society, 1992 14th Annual International Conference of the IEEE
Conference_Location :
Paris
Print_ISBN :
0-7803-0785-2
Electronic_ISBN :
0-7803-0816-6
DOI :
10.1109/IEMBS.1992.5760922
