DocumentCode :
54484
Title :
Binary Multiplication Using Hybrid MOS and Multi-Gate Single-Electron Transistors
Author :
Guoqing Deng ; Chunhong Chen
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Windsor, Windsor, ON, Canada
Volume :
21
Issue :
9
fYear :
2013
fDate :
Sept. 2013
Firstpage :
1573
Lastpage :
1582
Abstract :
In this paper, we investigate the design of binary tree multipliers based on multi-input counters using hybrid MOS and single-electron transistors (SETs). Our focus is on the design of phase-modulated counters which can be implemented with only a few MOSFETs and multi-gate SETs. In order to address some practical issues associated with SET/MOS hybrid circuits, we present an enhanced version of the counters to deal with temperature effect, reliability improvement, and operating speed with multipliers. Simulation results with the proposed phase-modulated (7:3) counter show that it is able to work at room temperature with a delay of 1.5 ns, power dissipation of 4.1 μW at frequency of 100 MHz, and maximum tolerable background charges of up to 0.2e with the worst-case delay of 3 ns.
Keywords :
MOSFET; circuit reliability; counting circuits; multiplying circuits; phase modulation; semiconductor device reliability; single electron transistors; SET; SET-MOS hybrid circuit; binary tree multiplier; frequency 100 MHz; hybrid MOSFET; multigate single-electron transistor; multiinput counter; phase-modulated counter; power 4.1 muW; reliability improvement; temperature 293 K to 298 K; time 1 ns; time 3 ns; CMOS integrated circuits; Capacitance; Logic gates; MOSFETs; Oscillators; Radiation detectors; Delay; multiplier; phase-modulated counter; reliability; room-temperature operation; single-electron tunneling;
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/TVLSI.2012.2217993
Filename :
6328289
Link To Document :
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