Trap-Profile Extraction Using High-Voltage Capacitance–Voltage Measurement in AlGaN/GaN Heterostructure Field-Effect Transistors With Field Plates

Author

Wen-Chia Liao ; Jen-Inn Chyi ; Yue-Ming Hsin

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan

Volume

62

Issue

3

fYear

2015

fDate

Mar-15

Firstpage

835

Lastpage

839

Abstract

A measurement methodology involving high-voltage capacitance-voltage (C-V) was proposed to determine the trapping profile of a stressed AlGaN/GaN heterostructure field-effect transistor (HFET). Comparing the curves between initial (device without stress) and stressed (device with stress) C-V measurements revealed that the transient behavior was dominated by ionized acceptor-like traps, and the trapping profile within the high drain-to-source OFF-state stressed AlGaN/GaN HFET could be deduced.

Keywords

III-V semiconductors; aluminium compounds; capacitance measurement; gallium compounds; high electron mobility transistors; impurity states; voltage measurement; wide band gap semiconductors; AlGaN-GaN; C-V measurements; HFET; drain-to-source OFF-state; heterostructure field-effect transistors; high-voltage capacitance-voltage measurement; ionized acceptor-like traps; transient behavior; trap-profile extraction; Aluminum gallium nitride; Charge carrier processes; Gallium nitride; HEMTs; Logic gates; MODFETs; Stress measurement; AlGaN/GaN heterostructure field-effect transistors (HFETs); current collapse; transient capacitance-voltage (C-V) measurement; transient capacitance???voltage ( $C$ ??? $V$ ) measurement;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2395720

Filename

7031942