DocumentCode
545461
Title
Electrical and optical characteristics simulation of GaN/AlGaN p-i-n avalanche photodiode
Author
Wang, Xiaodong ; Hu, Weida ; Chen, Xiaoshuang ; Lu, Wei
Author_Institution
Nat. Lab. for Infrared Phys., Chinese Acad. of Sci., Shanghai, China
Volume
3
fYear
2011
fDate
11-13 March 2011
Firstpage
279
Lastpage
281
Abstract
We report the epitaxial growth, fabrication, electrical and optical characteristics of GaN/AlGaN p-i-n avalanche photodiodes. The effects of polarization charge density on the dark current and the spectral responsivity of GaN/AlGaN p-i-n avalanche photodiodes are investigated in detail.
Keywords
III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium compounds; p-i-n photodiodes; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; GaN-AlGaN; dark current; electrical characteristic simulation; epitaxial growth; optical characteristic simulation; p-i-n avalanche photodiode; polarization charge density effect; spectral responsivity; Aluminum gallium nitride; Avalanche photodiodes; Dark current; Gallium nitride; Optical polarization; PIN photodiodes; Substrates; GaN/AlGaN p-i-n avalanche diodes; dark current; numerical simulation; polarization charge density;
fLanguage
English
Publisher
ieee
Conference_Titel
Computer Research and Development (ICCRD), 2011 3rd International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-61284-839-6
Type
conf
DOI
10.1109/ICCRD.2011.5764194
Filename
5764194
Link To Document