Threshold-voltage-difference-based CMOS voltage reference derived from basic current bias generator with 4.3 ppm°C temperature coefficient

A threshold-voltage-difference-based CMOS voltage reference topology derived from the basic current bias generator is proposed. The implementation in the GSMC 0.18 μm process demonstrated that a precise voltage of 516.3 mV can be generated with a minimal temperature coefficient of 4.3 ppm/°C. The reference consumes a current of 1.9 μA with a minimum supply voltage of 1.4 V. The line regulation is 0.075%/V at room temperature. It only occupies 0.013 mm² without any area optimisations because of its simple structure. Also, due to its special compound structure, the circuit can generate both a stable voltage and a relatively temperature-independent current.