Low loss Goubau Line on high-resitivity silicon in the 57–64 GHz band.

Author

Emond, J. ; Grzeskowiak, M. ; Lissorgues, G. ; Protat, S. ; Deshours, F. ; Richalot, E. ; Picon, O.

Author_Institution

ESYCOM, Univ. Paris-Est, Marne-la-Vallée, France

fYear

2011

fDate

11-15 April 2011

Firstpage

1459

Lastpage

1462

Abstract

Planar Goubau Line (PGL) structures on high resistivity silicon are simulated and measured in the 57-64GHz frequency band. It is shown that the increase of the substrate thickness permits to adapt this line, used at THz frequencies, to this frequency band. Very low losses are attained with a measured average attenuation of 0.064dB/mm on the whole band. Another advantage of the PGL consists in its very simple technological process, as just one level of metallization is necessary. A transition between the PGL and a coplanar waveguide is designed in order to perform on-wafer measurements, and very good agreement is obtained with simulation results for the attenuation of PGL.

Keywords

coplanar waveguides; metallisation; transmission line theory; PGL structures; Si; coplanar waveguide; frequency 57 GHz to 64 GHz; high-resitivity silicon substrate; on-wafer measurements; planar Goubau line structures; Attenuation; Dielectric losses; Frequency measurement; Permittivity; Silicon; Strips; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Antennas and Propagation (EUCAP), Proceedings of the 5th European Conference on

Conference_Location

Rome

Print_ISBN

978-1-4577-0250-1

Type

conf

Filename

5781785