Title :
Spectral analysis of noise sources in InGaN light emitting diodes
Author :
Lin, Gray ; Su, Kuan-Lin ; Yang, Shih-Tsun ; Chen, Tzung-Te ; Chen, Chiu-Ling
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
Noise characterization of InGaN light emitting diodes shows that the exponent in current dependence of low-frequency flicker noise amplitude and the corner frequency in high-frequency generation-recombination noise spectra are two possible indicators for device reliability.
Keywords :
flicker noise; gallium compounds; indium compounds; light emitting diodes; semiconductor device noise; semiconductor device reliability; spectral analysis; InGaN; corner frequency; current dependence; device reliability; high-frequency generation-recombination noise spectra; light emitting diodes; low-frequency flicker noise amplitude; noise characterization; noise sources; spectral analysis; Current measurement; Light emitting diodes; Low-frequency noise; Noise measurement; Semiconductor device reliability;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
