Title :
Intensity dependence of optically-induced injection currents in semiconductor quantum wells
Author :
Pochwala, Michal ; Duc, Huynh Thanh ; Förstner, Jens ; Meier, Torsten
Author_Institution :
Dept. of Phys., Univ. of Paderborn, Paderborn, Germany
Abstract :
The intensity dependence of optically-induced injection currents in semiconductor quantum wells is investigated numerically. Oscillatory behavior of the electron charge current transients as function of intensity and time is predicted and explained.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor quantum wells; transients; GaAs-AlxGa1-xAs; electron charge current transients; intensity dependence; optically-induced injection currents; oscillatory behavior; semiconductor quantum wells; Equations; Gallium arsenide; Mathematical model; Nonlinear optics; Optical polarization; Optical pulses; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
