A novel method to improve linearity of high frequency circuits designed with PD SOI MOSFET

A novel method to improve linearity of PD SOI MOSFET circuits is presented. There is a transition in the output-conductance of body-contacted PD SOI device associated to the finite body resistance (R_B). The transition degrades the device linearity specifications, particularly, HD3 and IP3. A relation for the body resistance is extracted to eliminate the transition. Using device simulation, the transition-free curve for the operation of a 45 nm PD SOI MOSFET was extracted. A 2.4 GHz low noise amplifier was designed to operate in the transition-free region. Mixed circuit device simulation of LNA showed at least 7 dB enhancement of HD3 and 4 dB improvement of IP3. Simulation results verified the high frequency advantage of transition-free design.