DocumentCode :
547826
Title :
Optimization of bulk GaAs Substrate removed electrooptic modulator using the Finite Element Method
Author :
Vahidi, Habib ; Abedi, Kambiz
Author_Institution :
Dept. of Electr. Eng., Shahid Beheshti Univ., Tehran, Iran
fYear :
2011
fDate :
17-19 May 2011
Firstpage :
1
Lastpage :
5
Abstract :
In this paper we have proposed a new structure for bulk GaAs Substrate removed electrooptic modulators. This new structure has been optimized by using the Finite Element Method to achieve a maximum matching between microwave and optical waves, half-wave voltage length product, VπL as low as 5 V-cm and electrical bandwidth as high as 220 GHz.
Keywords :
III-V semiconductors; electro-optical devices; electro-optical effects; finite element analysis; gallium arsenide; optical modulation; optimisation; GaAs; bulk substrate; electrooptic modulator; finite element method; frequency 220 GHz; half-wave voltage; microwave; optical wave; optimization; Electrooptic modulators; Microwave theory and techniques; Optical refraction; Optical variables control; Substrates; Electrooptic coefficient; Substrate removed; semiconductor electrooptic modulators; the Finite Element Method; travelling wave;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Engineering (ICEE), 2011 19th Iranian Conference on
Conference_Location :
Tehran
Print_ISBN :
978-1-4577-0730-8
Electronic_ISBN :
978-964-463-428-4
Type :
conf
Filename :
5955715
Link To Document :
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