Title :
A numerical study on base geometry of transistor laser: Quantum-well location effect
Author :
Taghavi, Iman ; Kaatuzian, Hassan
Author_Institution :
Electr. Eng. Dept., Amirkabir Univ. of Technol., Tehran, Iran
Abstract :
We report a numerical method based on both experimental data and physical model to simulate quantum-well dislocation effect inside the base region of a transistor laser of 150μm cavity length. Utilizing a special calculation method, base recombination lifetime is simulated for different quantum-well locations. In order to investigate optical bandwidth dependence on quantum well location coupled carrier photon equations are analyzed. Simulation shows significant enhancement in optical bandwidth (up to ~51GHz) due to moving the quantum well toward collector while current gain decreases. Also reported in this work is an optimum place for quantum-well to locate in the base region in order to maximize the bandwidth.
Keywords :
heterojunction bipolar transistors; numerical analysis; quantum well lasers; base recombination lifetime; current gain; numerical method; optical bandwidth; quantum well location coupled carrier photon equation; quantum-well dislocation effect; size 150 mum; transistor laser base geometry; Base Recombination Lifetime; Heterojunction Bipolar Transistor; Optical frequency response; Quantum-Well; Transistor Laser;
Conference_Titel :
Electrical Engineering (ICEE), 2011 19th Iranian Conference on
Conference_Location :
Tehran
Print_ISBN :
978-1-4577-0730-8
