FDLTD method for the physical simulationof microwave FET transistor

Summary from only given. This paper describes an application of weighted Laguerre polynomial functions to produce a new unconditionally stable Finite-Difference Laguerre-Time-domain (FDLTD) scheme for simulation of the Drift-Diffusion Model (DDM) of semiconductor devices. The unconditionally stability of FDLTD method leads to a significant reduction in the simulation time. For example, when 100 weighted Laguerre polynomial functions is used, FDLTD is 5 times faster than conventional FDTD method while they have the same degree of accuracy.