Title :
Tunable group delay in a SOI waveguide based on stimulated Raman scattering
Author :
Ferdosian, M. ; Kaatuzian, Hassan
Author_Institution :
Amirkabir Univ. of Technol., Tehran, Iran
Abstract :
We analytically demonstrate the slow down factor enhancement of slow light induced by stimulated Raman scattering in a silicon-on insulator waveguide with a p-i-n Structure. An analytical model is derived for group delay simulation by taking into account of propagation loss and free carrier absorption. It is shown that applying a variable reverse bias voltage to the waveguide decreases the FCA and thus the maximum group delay can be enhanced. Tunable delay time is achievable through applying different bias voltages.
Keywords :
optical waveguides; silicon-on-insulator; stimulated Raman scattering; FCA; SOI waveguide; Si; analytical model; free carrier absorption; p-i-n structure; propagation loss; silicon-on-insulator waveguide; stimulated Raman scattering; tunable group delay simulation; free carrier absorption; group delay; p-i-n structure; stimulated Raman scattering;
Conference_Titel :
Electrical Engineering (ICEE), 2011 19th Iranian Conference on
Conference_Location :
Tehran
Print_ISBN :
978-1-4577-0730-8