Channel Hot Carrier Degradation Mechanism in Long/Short Channel $n$ -FinFETs

The channel hot carrier degradation mechanisms in n-FinFET devices are studied. In long channel devices, interface degradation by hot carriers mainly degrades the device at the maximum impact ionization condition (V_G ~ V_D/2). At higher V_G closer to V_D, cold and hot carrier injection to the oxide bulk defect increases and dominates at the V_G=V_D stress condition. On the other hand, in short channel devices, hot carriers are generated continuously with respect to V_G and highly at V_G=V_D, and this hot carrier injection into the oxide bulk defect is the main degradation mechanism.