DocumentCode :
548654
Title :
An accurate packaged model for HVHBT 120W power amplifiers and its application to 250W Doherty amplifiers
Author :
Zhang, Xiaobing ; Chau, F. ; Lin, Bo
Author_Institution :
TriQuint Semiconductor, San Jose, United States
fYear :
2011
fDate :
5-10 June 2011
Firstpage :
1
Lastpage :
1
Abstract :
Summary form only given, as follows. An accurate packaged model is reported for GaAs HVHBT 120W amplifiers at 2140MHz. The model can precisely simulate small signal S-parameters as well as large signal harmonic load-pull power sweep. Very good agreement between simulation and measurement has been achieved. The model is then applied to simulate a 250W symmetric Doherty amplifier. The results of simulation agrees well with measurement. The difference in efficiency between simulation and measurement is only 1.6%.
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
ISSN :
0149-645X
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2011.5973229
Filename :
5973229
Link To Document :
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