DocumentCode
548654
Title
An accurate packaged model for HVHBT 120W power amplifiers and its application to 250W Doherty amplifiers
Author
Zhang, Xiaobing ; Chau, F. ; Lin, Bo
Author_Institution
TriQuint Semiconductor, San Jose, United States
fYear
2011
fDate
5-10 June 2011
Firstpage
1
Lastpage
1
Abstract
Summary form only given, as follows. An accurate packaged model is reported for GaAs HVHBT 120W amplifiers at 2140MHz. The model can precisely simulate small signal S-parameters as well as large signal harmonic load-pull power sweep. Very good agreement between simulation and measurement has been achieved. The model is then applied to simulate a 250W symmetric Doherty amplifier. The results of simulation agrees well with measurement. The difference in efficiency between simulation and measurement is only 1.6%.
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location
Baltimore, MD
ISSN
0149-645X
Print_ISBN
978-1-61284-754-2
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2011.5973229
Filename
5973229
Link To Document