Title :
An accurate packaged model for HVHBT 120W power amplifiers and its application to 250W Doherty amplifiers
Author :
Zhang, Xiaobing ; Chau, F. ; Lin, Bo
Author_Institution :
TriQuint Semiconductor, San Jose, United States
Abstract :
Summary form only given, as follows. An accurate packaged model is reported for GaAs HVHBT 120W amplifiers at 2140MHz. The model can precisely simulate small signal S-parameters as well as large signal harmonic load-pull power sweep. Very good agreement between simulation and measurement has been achieved. The model is then applied to simulate a 250W symmetric Doherty amplifier. The results of simulation agrees well with measurement. The difference in efficiency between simulation and measurement is only 1.6%.
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2011.5973229