• DocumentCode
    54872
  • Title

    Characterization of Bi–Ag–X Solder for High Temperature SiC Die Attach

  • Author

    Zhenzhen Shen ; Kun Fang ; Johnson, R. Wayne ; Hamilton, Michael C.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Auburn Univ., Auburn, AL, USA
  • Volume
    4
  • Issue
    11
  • fYear
    2014
  • fDate
    Nov. 2014
  • Firstpage
    1778
  • Lastpage
    1784
  • Abstract
    Higher operating temperature (200 °C) SiC power devices simplify the thermal management system for power electronics modules in hybrid and electric vehicle applications. However, common lead-free solders have a melting point of only 217 °C-229 °C, limiting their use in this application. In this paper, a Bi-Ag-X solder paste with a solidus point of approximately 265 °C was characterized on direct bond copper (DBC) and CuMo reactively brazed alumina substrates. The Cu and CuMo surfaces were plated with Ni:B and Au. During high-temperature storage (200 °C) of test vehicles on DBC, there was an initial decrease in die shear strength followed by relatively constant die shear strength with further aging (through 5000 h). The initial decrease in shear strength was determined to be the result of NiBi3 intermetallic formation. The formation of the intermetallic layer was limited by the thickness of the initial Ni plated on Cu or CuMo. Similar results were observed for CuMo samples thermal cycled (-55 °C to +195 °C) up to 2000 cycles.
  • Keywords
    ageing; bismuth alloys; melting point; microassembling; nickel alloys; power semiconductor devices; shear strength; silicon compounds; silver alloys; solders; thermal management (packaging); wide band gap semiconductors; Bi-Ag-X solder paste; CuMo surfaces; DBC; NiBi3; SiC; SiC power devices; aging; die shear strength; direct bond copper; high temperature SiC die attach; high-temperature storage; hybrid electric vehicle; intermetallic formation; lead-free solders; melting point; power electronics modules; reactively brazed alumina substrates; solidus point; thermal management; Intermetallic; Microassembly; Nickel; Silicon carbide; Substrates; Surface cracks; Tin; Die attach; high temperature; lead-free;
  • fLanguage
    English
  • Journal_Title
    Components, Packaging and Manufacturing Technology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    2156-3950
  • Type

    jour

  • DOI
    10.1109/TCPMT.2014.2345500
  • Filename
    6891308