Title :
Low-cost 25Gb/s 1300nm electroabsorption-modulated InGaAlAs RW-DFB-laser
Author :
Moehrle, Martin ; Przyrembel, Georges ; Bornholdt, Carsten ; Sigmund, Ariane ; Molzow, Wolf-Dietrich ; Klein, Holger
Author_Institution :
Fraunhofer Inst. for Telecommun., Heinrich-Hertz-Inst., Berlin, Germany
Abstract :
1300nm EMLs have been realized using an identical InGaAlAs MQW layer stack for the DFB and the EAM section and thus allowing for low fabrication costs. The devices show excellent 25Gb/s and 40Gb/s modulation performance at 50°C and are therefore well suited to be used in 4×25Gb/s systems.
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; optical fabrication; quantum well lasers; InGaAlAs; MQW layer; bit rate 25 Gbit/s; bit rate 40 Gbit/s; electroabsorption-modulated RW-DFB-laser; modulation performance; multiple quantum wells; temperature 50 degC; wavelength 1300 nm; Current measurement; Indium phosphide; Modulation; Optical variables measurement; Quantum well devices; Temperature measurement;
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location :
Berlin
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
