DocumentCode :
549292
Title :
Refractive index contributions to phase shifting in InP based 30 GHz bandwidth n-i-n Mach-Zehnder Modulators
Author :
O´Callaghan, James R. ; Roycroft, Brendan ; Guo, Wei-Hua ; Lu, Q.Y. ; Daunt, Chris ; Donegan, John ; Peters, Frank H. ; Corbett, Brian
Author_Institution :
Tyndall Nat. Inst., Cork, Ireland
fYear :
2011
fDate :
22-26 May 2011
Firstpage :
1
Lastpage :
4
Abstract :
We present a n-i-n based Mach - Zehnder Modulator with a 30 GHz small signal modulation bandwidth. Fabry-Perot fringes from a straight waveguide structure were investigated as a function of voltage showing a strong positive index shift, which on first sight appears to follow the absolute value of current rather than voltage. However, the refractive index increases with bias, so cannot be a carrier density effect and heating is excluded due to the high bandwidth. Refractive index shifts were measured for both TE and TM polarizations, thereby eliminating the Pockels effect as the major contributing mechanism for index change. From the above considerations of positive index shift and polarization insensitivity we deduce that the dominant mechanism is the second order Quantum Confined Stark Effect, which is quite polarization insensitive at about 100 meV below the bandgap, and that the current does not have a significant contribution to device performance.
Keywords :
III-V semiconductors; Pockels effect; carrier density; indium compounds; light polarisation; optical modulation; optical phase shifters; optical waveguides; quantum confined Stark effect; refractive index; Fabry-Perot fringes; InP; Pockels effect; TE polarizations; TM polarizations; band gap; carrier density; n-i-n Mach-Zehnder Modulators; phase shifting; polarization insensitivity; positive index shift; refractive index shift; second order quantum confined Stark effect; signal modulation bandwidth; waveguide structure; Bandwidth; Contacts; Indexes; Indium phosphide; Modulation; Optical waveguides; Refractive index;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location :
Berlin
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
Type :
conf
Filename :
5978287
Link To Document :
بازگشت