Self-aligned ohmic contact scheme to InGaAs using epitaxial Ge growth

Author

Firrincieli, Andrea ; Vincent, B. ; Waldron, N. ; Simoen, E. ; Claeys, C. ; Kittl, J.

Author_Institution

Imec, Leuven, Belgium

fYear

2011

fDate

22-26 May 2011

Firstpage

1

Lastpage

3

Abstract

In this work we offer an integration-ready solution to obtain self-aligned ohmic contacts on n-type III-V layers. We demonstrate ohmic contacts on n-type In_0.53Ga_0.47As by means of selective growth of epitaxial Ge followed by selective Ni germanidation process. Circular Transfer Length Method (CTLM) is used to extract the values of the Specific Contact Resistivity ρ_C of the contacts. Values of ρ_C in the order of 4×10^-5 Ω-cm² have been measure This scheme, if further optimized, can contribute to the development of MOSFETs devices based on high-mobility materials.

Keywords

III-V semiconductors; contact resistance; epitaxial growth; gallium arsenide; indium compounds; ohmic contacts; MOSFET devices; NiGe-In_0.53Ga_0.47As; circular transfer length method; epitaxial Ge growth; high-mobility materials; integration-ready solution; n-type III-V layers; selective Ni germaniation process; selective growth; self-aligned ohmic contact scheme; specific contact resistivity; CMOS integrated circuits; Conductivity; Epitaxial growth; Indium gallium arsenide; Nickel; Ohmic contacts;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials

Conference_Location

Berlin

Print_ISBN

978-1-4577-1753-6

Electronic_ISBN

978-3-8007-3356-9

Type

conf

Filename

5978291