Title :
Self-aligned ohmic contact scheme to InGaAs using epitaxial Ge growth
Author :
Firrincieli, Andrea ; Vincent, B. ; Waldron, N. ; Simoen, E. ; Claeys, C. ; Kittl, J.
Author_Institution :
Imec, Leuven, Belgium
Abstract :
In this work we offer an integration-ready solution to obtain self-aligned ohmic contacts on n-type III-V layers. We demonstrate ohmic contacts on n-type In0.53Ga0.47As by means of selective growth of epitaxial Ge followed by selective Ni germanidation process. Circular Transfer Length Method (CTLM) is used to extract the values of the Specific Contact Resistivity ρC of the contacts. Values of ρC in the order of 4×10-5 Ω-cm2 have been measure This scheme, if further optimized, can contribute to the development of MOSFETs devices based on high-mobility materials.
Keywords :
III-V semiconductors; contact resistance; epitaxial growth; gallium arsenide; indium compounds; ohmic contacts; MOSFET devices; NiGe-In0.53Ga0.47As; circular transfer length method; epitaxial Ge growth; high-mobility materials; integration-ready solution; n-type III-V layers; selective Ni germaniation process; selective growth; self-aligned ohmic contact scheme; specific contact resistivity; CMOS integrated circuits; Conductivity; Epitaxial growth; Indium gallium arsenide; Nickel; Ohmic contacts;
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location :
Berlin
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
