Title :
100nm-gate-length In0.47Ga0.53As multi-gate MOSFET: Fabrication and characterisation
Author :
Mo, J.J. ; Wichmann, N. ; Roelens, Y. ; Zaknoune, M. ; Desplanque, L. ; Wallart, X. ; Bollaert, S.
Author_Institution :
IEMN, Univ. Lille 1, Villeneuve-d´´Ascq, France
Abstract :
In this paper, multi-gate In0.47Ga0.53As MOSFETs with different numbers of fingers (4, 8 and 16) and different gate length were fabricated by using air-bridge technology. The devices were made by self-aligned method with gate deposition at first. For MOSFET with a gate length of 100nm, a maximum drain current of 120mA/mm, and a maximum transconductance of 75mS/mm were achieved at room temperature. A cut-off frequency of 100GHz, and a maximum oscillation frequency of 31 GHZ were extracted for device with 16 fingers.
Keywords :
III-V semiconductors; MOSFET; gallium arsenide; indium compounds; nanofabrication; In0.47Ga0.53As; air-bridge technology; cut-off frequency; fingers; frequency 100 GHz; frequency 31 GHz; gate length; maximum drain current; multigate MOSFET; oscillation frequency; self-aligned method; size 100 nm; temperature 293 K to 298 K; transconductance; Indium phosphide;
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location :
Berlin
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
