Title :
Narrow linewidth 1.55 µm laterally-coupled DFB lasers fabricated using nanoimprint lithography
Author :
Telkkälä, Jarkko ; Viheriälä, Jukka ; Bister, Mariia ; Karinen, Jukka ; Melanen, Petri ; Dumitrescu, Mihail ; Guina, Mircea
Author_Institution :
Optoelectron. Res. Centre, Tampere Univ. of Technol., Tampere, Finland
Abstract :
We report on the use of nanoimprint lithography for the fabrication of InP-based laterally-coupled ridge waveguide distributed feedback laser diodes (LC-DFB LDs) emitting around 1550 nm. This is an important wavelength range for telecommunication and LIDAR applications both requiring narrow linewidth emitters. At room temperature the as-cleaved lasers exhibited a side-mode suppression ratio of 50 dB at an output power of 6 mW. The lasers showed ultra-narrow single-mode spectrum with Lorentzian part of the measured linewidth being ~200 kHz. The results obtained prove nano-imprint lithography suitable for the low-cost manufacturing of high performance single-mode laser diodes.
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium compounds; indium compounds; laser modes; nanolithography; optical fabrication; optical waveguides; quantum well lasers; ridge waveguides; spectral line breadth; InP-GaInAs-AlGaInAs; LIDAR applications; as-cleaved lasers; distributed feedback laser diodes; laterally coupled DFB lasers; nanoimprint lithography; narrow linewidth emitters; power 6 mW; ridge waveguide; side mode suppression ratio; telecommunication applications; temperature 293 K to 298 K; ultranarrow single mode spectrum; wavelength 1.55 mum; Diode lasers; Distributed feedback devices; Etching; Gratings; Measurement by laser beam; Surface emitting lasers;
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location :
Berlin
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
