Title :
InAs/InGaAsP quantum dots emitting at 1.5 µm for applications in lasers
Author :
Semenova, E.S. ; Kulkova, I.V. ; Kadkhodazadeh, S. ; Schubert, M. ; Dunin-Borkowski, R.E. ; Yvind, K.
Author_Institution :
DTU Fotonik, Tech. Univ. of Denmark, Lyngby, Denmark
Abstract :
In this work the epitaxial growth of InAs quantum dots (QDs) in an InGaAsP matrix on an InP wafer is described. A new approach to shift the emission wavelength to the 1.5μm region using deposition of a thin GaAs capping layer on top of the QDs is suggested and exploited. Laser structures based on 5 layers of such dots as the gain material demonstrate lasing in continuous wave regime at 1.5 μm wavelength at room temperature.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; quantum dot lasers; vapour phase epitaxial growth; InAs-InGaAsP-InP; emission wavelength; epitaxial growth; gain material; lasers; quantum dots; temperature 293 K to 298 K; wavelength 1.5 mum; Epitaxial growth; Gallium arsenide; Indium phosphide; Optical waveguides; Quantum dot lasers; Waveguide lasers;
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location :
Berlin
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
