Title :
Self-aligned metal S/D InP MOSFETs using metallic Ni-InP alloys
Author :
Kim, S.H. ; Yokoyama, M. ; Taoka, N. ; Iida, R. ; Lee, S. ; Nakane, R. ; Urabe, Y. ; Miyata, N. ; Yasuda, T. ; Yamada, H. ; Fukuhara, N. ; Hata, M. ; Takenaka, M. ; Takagi, S.
Author_Institution :
Univ. of Tokyo, Tokyo, Japan
Abstract :
In this work, Ni-InP alloys formed by direct reaction between Ni and InP were evaluated as a S/D metal material. The sheet resistance of Ni-InP has found to be 35-90 Ω/square, less than that of doped N+ layer formed by ion implantation, conventional method for S/D formation. The Ni-InP alloys also show ohmic and Schottky behavior for unintentionally doped InP (lightly n-InP) and p-InP, respectively. Using this novel material of Ni-InP, InP MOSFETs with the self-aligned metal S/D structure were fabricated with the process temperature under 300°C. MOSFETs shows normal transistor behavior with high Ion/Ioff ratio of 106 and low subthreshold swing of 120 mV/dec attributable to Ni-InP/InP junctions.
Keywords :
III-V semiconductors; MOSFET; Schottky barriers; indium compounds; ion implantation; nickel alloys; ohmic contacts; Ni-InP; Ni-InP-InP; S-D metal material; Schottky behavior; ion implantation; low subthreshold swing; metallic alloys; ohmic behavior; self-aligned metal MOSFET; self-aligned metal S-D structure; sheet resistance; temperature 300 degC; Indium phosphide; Junctions; Logic gates; MOSFETs; Nickel;
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location :
Berlin
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
