Title :
Passivation of InGaAs/InAlAs/InP HEMTs using Al2O3 atomic layer deposition
Author :
Schleeh, J. ; Halonen, J. ; Nilsson, B. ; Nilsson, P. Å ; Zeng, L.J. ; Ramvall, P. ; Wadefalk, N. ; Zirath, H. ; Olsson, E. ; Grahn, J.
Author_Institution :
Dept. of Microtechnol. & Nanosci. (MC2), Chalmers Univ. of Technol., Göteborg, Sweden
Abstract :
InGaAs/InAlAs/InP HEMTs (InP HEMTs) passivated by Al2O3 atomic layer deposition (ALD) demonstrated improved DC performance compared to Si3N4 plasma enhanced chemical vapour deposition (PECVD). DC measurements have been performed on 130 nm gate-length devices before and after passivation. An increase in maximum drain current density of 20% and extrinsic transconductance of 30% were observed after both ALD and PECVD device passivation. In comparison to PECVD passivated InP HEMTs, ALD passivated devices demonstrated a full suppression of a kink in the I-V characteristics associated with surface traps.
Keywords :
III-V semiconductors; aluminium compounds; atomic layer deposition; gallium arsenide; high electron mobility transistors; indium compounds; passivation; plasma CVD; Al2O3; DC performance; HEMT; InGaAs-InAlAs-InP; atomic layer deposition; extrinsic transconductance; gate-length devices; maximum drain current density; passivation; plasma enhanced chemical vapour deposition; size 130 nm; surface trap; Aluminum oxide; Atomic layer deposition; HEMTs; Indium phosphide; Logic gates; MODFETs; Passivation;
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location :
Berlin
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
