DocumentCode :
549309
Title :
Two-bandgap semiconductor optical amplifier integrated using quantum well intermixing
Author :
Lee, Ko-Hsin ; Webb, Roderick P. ; Manning, Robert J. ; Roycroft, Brendan ; O´Callaghan, James ; Peters, Frank H. ; Corbett, Brian
Author_Institution :
Tyndall Nat. Inst., Cork, Ireland
fYear :
2011
fDate :
22-26 May 2011
Firstpage :
1
Lastpage :
4
Abstract :
We propose and fabricate a two-bandgap SOA device integrated monolithically using a quantum well intermixing technique on an AlInGaAs-based multiple quantum well structure. With increased current injection into the wide bandgap section, the gain peak wavelength shows a shift to the blue and the gain at shorter wavelengths is significantly enhanced. The 3-dB gain bandwidth is extended with this two-bandgap SOA device, demonstrating the potential for realisation of wide bandwidth SOAs. Moreover, it is found that saturation output power depends on the direction of propagation, which may arise from a lower differential gain and/or a shorter carrier lifetime in the wide bandgap section.
Keywords :
III-V semiconductors; aluminium compounds; carrier lifetime; gallium arsenide; indium compounds; integrated optics; light propagation; optical fabrication; optical saturation; quantum well devices; semiconductor optical amplifiers; AlInGaAs; carrier lifetime; current injection; differential gain; gain bandwidth; monolithic integration; multiple quantum well structure; propagation direction; quantum well intermixing; saturation output power; two-bandgap semiconductor optical amplifier; wavelength shift; Annealing; Bandwidth; Materials; Photonic band gap; Photonics; Power generation; Semiconductor optical amplifiers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
Conference_Location :
Berlin
Print_ISBN :
978-1-4577-1753-6
Electronic_ISBN :
978-3-8007-3356-9
Type :
conf
Filename :
5978308
Link To Document :
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